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Equipment: Spectra Physics Explorer
Applications: Thin film ablation, Surface texturing, PV materials processing, LIFT processes, Thin film photovoltaic micromachining, Laser doping, Scribing of thin film solar cells, Laser firing processes, Material doping.
Properties: DPSS Nd:YVO4 532 nm, 2 W @ 50 kHz, Pulse duration: 15 ns, Pulse frequency: 20-150 kHz, Energy attenuator, Beam shaper (piShaper) for 532 nm, XYZ stages, Scanner.
Tested materials: Laser induced forward transfer (LIFT) of Ag pastes, Local laser doping, Laser fired contacts for PV.
Laboratory: Spain - UPM
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Method Min feature size Working area Process speed
ps Ultrashort Pulse Laser Ablation ~20 µm Scanner: 10×10 cm
Stages: 30 x30 cm
Scanner: 3 mm/s-10 m/s
Stages: up to 0.3 m/s at 0.1 µm resolution